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IRFD010
Vishay Siliconix
IRFD010
MOSFET N-CH 50V 1.7A 4DIP
4-DIP (0.300", 7.62mm)
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IRFD010 Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 50 V | |
Current - Continuous Drain (Id) @ 25°C | 1.7A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 200mOhm @ 860mA, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 1W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Through Hole | |
Supplier Device Package | 4-HVMDIP | |
Package / Case | 4-DIP (0.300", 7.62mm) |
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