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VS-10ETS10STRRPBF
Vishay General Semiconductor - Diodes Division
VS-10ETS10STRRPBF
DIODE GEN PURP 1KV 10A TO263AB
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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VS-10ETS10STRRPBF Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| Technology | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 1000 V | |
| Current - Average Rectified (Io) | 10A | |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 10 A | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | - | |
| Current - Reverse Leakage @ Vr | 50 µA @ 1000 V | |
| Capacitance @ Vr, F | - | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Supplier Device Package | TO-263AB (D²PAK) | |
| Operating Temperature - Junction | -40°C ~ 150°C |
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