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V10P10HE3/86A
Vishay General Semiconductor - Diodes Division
V10P10HE3/86A
DIODE SCHOTTKY 100V 10A TO277A
TO-277, 3-PowerDFN
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V10P10HE3/86A Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | eSMP®, TMBS® | |
Technology | Schottky | |
Voltage - DC Reverse (Vr) (Max) | 100 V | |
Current - Average Rectified (Io) | 10A | |
Voltage - Forward (Vf) (Max) @ If | 680 mV @ 10 A | |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
Reverse Recovery Time (trr) | - | |
Current - Reverse Leakage @ Vr | 150 µA @ 100 V | |
Capacitance @ Vr, F | - | |
Grade | Automotive | |
Qualification | AEC-Q101 | |
Mounting Type | Surface Mount | |
Package / Case | TO-277, 3-PowerDFN | |
Supplier Device Package | TO-277A (SMPC) | |
Operating Temperature - Junction | -40°C ~ 150°C |
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