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S1B-E3/51T
Vishay General Semiconductor - Diodes Division
S1B-E3/51T
DIODE GEN PURP 100V 1A DO214AC
DO-214AC, SMA
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S1B-E3/51T Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
Technology | Standard | |
Voltage - DC Reverse (Vr) (Max) | 100 V | |
Current - Average Rectified (Io) | 1A | |
Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 1 A | |
Speed | Standard Recovery >500ns, > 200mA (Io) | |
Reverse Recovery Time (trr) | 1.8 µs | |
Current - Reverse Leakage @ Vr | 1 µA @ 100 V | |
Capacitance @ Vr, F | - | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Package / Case | DO-214AC, SMA | |
Supplier Device Package | DO-214AC (SMA) | |
Operating Temperature - Junction | -55°C ~ 150°C |
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