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BYG10J/TR
Vishay General Semiconductor - Diodes Division
BYG10J/TR
DIODE AVAL 600V 1.5A DO214AC
DO-214AC, SMA
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BYG10J/TR Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
Technology | Avalanche | |
Voltage - DC Reverse (Vr) (Max) | 600 V | |
Current - Average Rectified (Io) | 1.5A | |
Voltage - Forward (Vf) (Max) @ If | 1.15 V @ 1.5 A | |
Speed | Standard Recovery >500ns, > 200mA (Io) | |
Reverse Recovery Time (trr) | 4 µs | |
Current - Reverse Leakage @ Vr | 1 µA @ 600 V | |
Capacitance @ Vr, F | - | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Package / Case | DO-214AC, SMA | |
Supplier Device Package | DO-214AC (SMA) | |
Operating Temperature - Junction | -55°C ~ 150°C |
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