Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
TPH3208PD
Transphorm
TPH3208PD
GANFET N-CH 650V 20A TO220AB
TO-220-3
Active
Payment Methods:
Shipping Methods:
TPH3208PD Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| FET Type | N-Channel | |
| Technology | GaNFET (Gallium Nitride) | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 13A, 8V | |
| Vgs(th) (Max) @ Id | 2.6V @ 300µA | |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 8 V | |
| Vgs (Max) | ±18V | |
| Input Capacitance (Ciss) (Max) @ Vds | 760 pF @ 400 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 96W (Tc) | |
| Operating Temperature | -55°C ~ 150°C | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220AB | |
| Package / Case | TO-220-3 |
3,950
In Stock
Minimum: 1
Unit Price:
N/A
Total Price:
N/A
This price is for reference only, please contact us for now price support@easev.net.
