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TPH3207WS
Transphorm
TPH3207WS
GANFET N-CH 650V 50A TO247-3
TO-247-3
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TPH3207WS Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| FET Type | N-Channel | |
| Technology | GaNFET (Gallium Nitride) | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 32A, 8V | |
| Vgs(th) (Max) @ Id | 2.65V @ 700µA | |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 8 V | |
| Vgs (Max) | ±18V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2197 pF @ 400 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 178W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-247-3 | |
| Package / Case | TO-247-3 |
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