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TPD3215M
Transphorm
TPD3215M
GANFET 2N-CH 600V 70A MODULE
Module
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TPD3215M Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| Technology | GaNFET (Gallium Nitride) | |
| Configuration | 2 N-Channel (Half Bridge) | |
| FET Feature | - | |
| Drain to Source Voltage (Vdss) | 600V | |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) | |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 30A, 8V | |
| Vgs(th) (Max) @ Id | - | |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 8V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2260pF @ 100V | |
| Power - Max | 470W | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Through Hole | |
| Package / Case | Module | |
| Supplier Device Package | Module |
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