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TP65H035WSQA

Transphorm
TP65H035WSQA
GANFET N-CH 650V 47.2A TO247-3
TO-247-3
Active
TP65H035WSQA
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TP65H035WSQA Attributes
TYPE DESCRIPTION SELECT
Series Automotive, AEC-Q101
FET Type N-Channel
Technology GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 47.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 41mOhm @ 32A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 400 V
FET Feature -
Power Dissipation (Max) 187W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
2,709 In Stock
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Minimum: 1
Unit Price: $14.92
Total Price: $14.92
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