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TP65H035G4WS

Transphorm
TP65H035G4WS
GANFET N-CH 650V 46.5A TO247-3
TO-247-3
Active
TP65H035G4WS
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TP65H035G4WS Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 46.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 41mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 0 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 400 V
FET Feature -
Power Dissipation (Max) 156W (Tc)
Operating Temperature -55°C ~ 150°C
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
1,397 In Stock
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Minimum: 1
Unit Price: $12.56
Total Price: $12.56
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