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TRS8E65H,S1Q
Toshiba Semiconductor and Storage
TRS8E65H,S1Q
G3 SIC-SBD 650V 8A TO-220-2L
TO-220-2
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TRS8E65H,S1Q Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| Technology | SiC (Silicon Carbide) Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 650 V | |
| Current - Average Rectified (Io) | 8A | |
| Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 8 A | |
| Speed | No Recovery Time > 500mA (Io) | |
| Reverse Recovery Time (trr) | 0 ns | |
| Current - Reverse Leakage @ Vr | 90 µA @ 650 V | |
| Capacitance @ Vr, F | 520pF @ 1V, 1MHz | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-2 | |
| Supplier Device Package | TO-220-2L | |
| Operating Temperature - Junction | 175°C |
7,564
In Stock
Minimum: 1
Unit Price:
$2.76
Total Price:
$2.76
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