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TRS6V65H,LQ
Toshiba Semiconductor and Storage
TRS6V65H,LQ
G3 SIC-SBD 650V 6A DFN8X8
4-VSFN Exposed Pad
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TRS6V65H,LQ Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| Technology | SiC (Silicon Carbide) Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 650 V | |
| Current - Average Rectified (Io) | 6A | |
| Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 6 A | |
| Speed | No Recovery Time > 500mA (Io) | |
| Reverse Recovery Time (trr) | 0 ns | |
| Current - Reverse Leakage @ Vr | 70 µA @ 650 V | |
| Capacitance @ Vr, F | 392pF @ 1V, 1MHz | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Package / Case | 4-VSFN Exposed Pad | |
| Supplier Device Package | 4-DFN-EP (8x8) | |
| Operating Temperature - Junction | 175°C |
7,183
In Stock
Minimum: 1
Unit Price:
$1.05
Total Price:
$1.05
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