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TRS12E65H,S1Q
Toshiba Semiconductor and Storage
TRS12E65H,S1Q
G3 SIC-SBD 650V 12A TO-220-2L
TO-220-2
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TRS12E65H,S1Q Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
Technology | SiC (Silicon Carbide) Schottky | |
Voltage - DC Reverse (Vr) (Max) | 650 V | |
Current - Average Rectified (Io) | 12A | |
Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 12 A | |
Speed | No Recovery Time > 500mA (Io) | |
Reverse Recovery Time (trr) | 0 ns | |
Current - Reverse Leakage @ Vr | 120 µA @ 650 V | |
Capacitance @ Vr, F | 778pF @ 1V, 1MHz | |
Grade | - | |
Qualification | - | |
Mounting Type | Through Hole | |
Package / Case | TO-220-2 | |
Supplier Device Package | TO-220-2L | |
Operating Temperature - Junction | 175°C |
4,467
In Stock
Minimum: 1
Unit Price:
$3.27
Total Price:
$3.27
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