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TPCC8136.LQ
Toshiba Semiconductor and Storage
TPCC8136.LQ
MOSFET P-CH 20V 9.4A 8TSON
8-PowerVDFN
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TPCC8136.LQ Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | U-MOSVI | |
FET Type | P-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 20 V | |
Current - Continuous Drain (Id) @ 25°C | 9.4A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Rds On (Max) @ Id, Vgs | 16mOhm @ 9.4A, 4.5V | |
Vgs(th) (Max) @ Id | 1.2V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 5 V | |
Vgs (Max) | ±12V | |
Input Capacitance (Ciss) (Max) @ Vds | 2350 pF @ 10 V | |
FET Feature | - | |
Power Dissipation (Max) | 700mW (Ta), 18W (Tc) | |
Operating Temperature | 150°C | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | 8-TSON Advance (3.1x3.1) | |
Package / Case | 8-PowerVDFN |
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