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TPCC8105,L1Q(CM
Toshiba Semiconductor and Storage
TPCC8105,L1Q(CM
MOSFET P-CH 30V 23A 8TSON
8-VDFN Exposed Pad
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TPCC8105,L1Q(CM Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | U-MOSVI | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Current - Continuous Drain (Id) @ 25°C | 23A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 7.8mOhm @ 11.5A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 500µA | |
| Gate Charge (Qg) (Max) @ Vgs | 76 nC @ 10 V | |
| Vgs (Max) | +20V, -25V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3240 pF @ 10 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 700mW (Ta), 30W (Tc) | |
| Operating Temperature | 150°C | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-TSON Advance (3.3x3.3) | |
| Package / Case | 8-VDFN Exposed Pad |
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