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TPCC8066-H,LQ(S
Toshiba Semiconductor and Storage
TPCC8066-H,LQ(S
MOSFET N-CH 30V 11A 8TSON
8-PowerVDFN
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TPCC8066-H,LQ(S Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | U-MOSVII-H | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 30 V | |
Current - Continuous Drain (Id) @ 25°C | 11A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 15mOhm @ 5.5A, 10V | |
Vgs(th) (Max) @ Id | 2.3V @ 100µA | |
Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 10 V | |
FET Feature | - | |
Power Dissipation (Max) | 700mW (Ta), 17W (Tc) | |
Operating Temperature | 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | 8-TSON Advance (3.1x3.1) | |
Package / Case | 8-PowerVDFN |
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