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TPCC8009,LQ(O
Toshiba Semiconductor and Storage
TPCC8009,LQ(O
MOSFET N-CH 30V 24A 8TSON
8-PowerVDFN
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TPCC8009,LQ(O Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | U-MOSIV | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | - | |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 12A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 200µA | |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 10 V | |
| Vgs (Max) | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 1270 pF @ 10 V | |
| FET Feature | - | |
| Power Dissipation (Max) | - | |
| Operating Temperature | 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-TSON Advance (3.1x3.1) | |
| Package / Case | 8-PowerVDFN |
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