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TPC6010-H(TE85L,FM
Toshiba Semiconductor and Storage
TPC6010-H(TE85L,FM
MOSFET N-CH 60V 6.1A VS-6
SOT-23-6 Thin, TSOT-23-6
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TPC6010-H(TE85L,FM Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | U-MOSVI-H | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 60 V | |
Current - Continuous Drain (Id) @ 25°C | 6.1A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 59mOhm @ 3.1A, 10V | |
Vgs(th) (Max) @ Id | 2.3V @ 100µA | |
Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 830 pF @ 10 V | |
FET Feature | - | |
Power Dissipation (Max) | 700mW (Ta) | |
Operating Temperature | 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | VS-6 (2.9x2.8) | |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
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