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TK4P50D(T6RSS-Q)
Toshiba Semiconductor and Storage
TK4P50D(T6RSS-Q)
MOSFET N-CH 500V 4A DPAK
TO-252-3, DPak (2 Leads + Tab), SC-63
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TK4P50D(T6RSS-Q) Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | π-MOSVII | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 500 V | |
Current - Continuous Drain (Id) @ 25°C | 4A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 2Ohm @ 2A, 10V | |
Vgs(th) (Max) @ Id | 4.4V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 80W (Tc) | |
Operating Temperature | 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | D-Pak | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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