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TK40J20D,S1F(O
Toshiba Semiconductor and Storage
TK40J20D,S1F(O
MOSFET N-CH 200V 40A TO3P
TO-3P-3, SC-65-3
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TK40J20D,S1F(O Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | π-MOSVIII | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 200 V | |
Current - Continuous Drain (Id) @ 25°C | 40A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 44mOhm @ 20A, 10V | |
Vgs(th) (Max) @ Id | 3.5V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 4300 pF @ 100 V | |
FET Feature | - | |
Power Dissipation (Max) | 260W (Tc) | |
Operating Temperature | 150°C | |
Grade | - | |
Qualification | - | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-3P(N) | |
Package / Case | TO-3P-3, SC-65-3 |
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