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TK370A60F,S4X(S

Toshiba Semiconductor and Storage
TK370A60F,S4X(S
MOSFET N-CH
TO-220-3 Full Pack
Active
TK370A60F,S4X(S
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TK370A60F,S4X(S Attributes
TYPE DESCRIPTION SELECT
Series U-MOSIX
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 370mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 4V @ 2.04mA
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 300 V
FET Feature -
Power Dissipation (Max) 45W (Tc)
Operating Temperature 150°C
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
5,768 In Stock
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Unit Price: N/A
Total Price: N/A
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