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TK2P60D(TE16L1,NV)

Toshiba Semiconductor and Storage
TK2P60D(TE16L1,NV)
MOSFET N-CH 600V 2A PW-MOLD
TO-252-3, DPak (2 Leads + Tab), SC-63
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TK2P60D(TE16L1,NV) Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 280 pF @ 25 V
FET Feature -
Power Dissipation (Max) 60W (Tc)
Operating Temperature 150°C
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package PW-MOLD
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
40 In Stock
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