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TK14C65W,S1Q
Toshiba Semiconductor and Storage
TK14C65W,S1Q
MOSFET N-CH 650V 13.7A I2PAK
TO-262-3 Long Leads, I²Pak, TO-262AA
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TK14C65W,S1Q Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | DTMOSIV | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 650 V | |
Current - Continuous Drain (Id) @ 25°C | 13.7A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 250mOhm @ 6.9A, 10V | |
Vgs(th) (Max) @ Id | 3.5V @ 690µA | |
Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 300 V | |
FET Feature | - | |
Power Dissipation (Max) | 130W (Tc) | |
Operating Temperature | 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Through Hole | |
Supplier Device Package | I2PAK | |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
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