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TJ9A10M3,S4Q
Toshiba Semiconductor and Storage
TJ9A10M3,S4Q
TJ9A10M3,S4Q
TO-220-3 Full Pack
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TJ9A10M3,S4Q Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | U-MOSVI | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 4.5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 10 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 19W (Tc) | |
| Operating Temperature | 150°C | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220SIS | |
| Package / Case | TO-220-3 Full Pack |
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