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SSM6P16FE(TE85L,F)
Toshiba Semiconductor and Storage
SSM6P16FE(TE85L,F)
MOSFET P-CH 20V 0.1A ES6
SOT-563, SOT-666
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SSM6P16FE(TE85L,F) Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20 V | |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | - | |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 10mA, 4V | |
| Vgs(th) (Max) @ Id | - | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Vgs (Max) | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 11 pF @ 3 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 150mW (Ta) | |
| Operating Temperature | 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | ES6 | |
| Package / Case | SOT-563, SOT-666 |
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