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SSM6K411TU(TE85L,F

Toshiba Semiconductor and Storage
SSM6K411TU(TE85L,F
MOSFET N-CH 20V 10A UF6
6-SMD, Flat Leads
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SSM6K411TU(TE85L,F Attributes
TYPE DESCRIPTION SELECT
Series U-MOSIV
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 12mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 9.4 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 710 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1W (Ta)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package UF6
Package / Case 6-SMD, Flat Leads
3,016 In Stock
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