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SSM6J53FE(TE85L,F)
Toshiba Semiconductor and Storage
SSM6J53FE(TE85L,F)
MOSFET P-CH 20V 1.8A ES6
SOT-563, SOT-666
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SSM6J53FE(TE85L,F) Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
FET Type | P-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 20 V | |
Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 2.5V | |
Rds On (Max) @ Id, Vgs | 136mOhm @ 1A, 2.5V | |
Vgs(th) (Max) @ Id | 1V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | 10.6 nC @ 4 V | |
Vgs (Max) | ±8V | |
Input Capacitance (Ciss) (Max) @ Vds | 568 pF @ 10 V | |
FET Feature | - | |
Power Dissipation (Max) | 500mW (Ta) | |
Operating Temperature | 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | ES6 | |
Package / Case | SOT-563, SOT-666 |
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