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SSM3K7002BS,LF

Toshiba Semiconductor and Storage
SSM3K7002BS,LF
MOSFET N-CH 60V 200MA S-MINI
TO-236-3, SC-59, SOT-23-3
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SSM3K7002BS,LF
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SSM3K7002BS,LF Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.1Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 17 pF @ 25 V
FET Feature -
Power Dissipation (Max) 200mW (Ta)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package S-Mini
Package / Case TO-236-3, SC-59, SOT-23-3
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