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SSM3K35MFV,L3F

Toshiba Semiconductor and Storage
SSM3K35MFV,L3F
MOSFET N-CH 20V 180MA VESM
SOT-723
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SSM3K35MFV,L3F
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SSM3K35MFV,L3F Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4V
Rds On (Max) @ Id, Vgs 3Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 9.5 pF @ 3 V
FET Feature -
Power Dissipation (Max) 150mW (Ta)
Operating Temperature 150°C
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package VESM
Package / Case SOT-723
1,284 In Stock
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