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SSM3K35MFV,L3F
Toshiba Semiconductor and Storage
SSM3K35MFV,L3F
MOSFET N-CH 20V 180MA VESM
SOT-723
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SSM3K35MFV,L3F Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 20 V | |
Current - Continuous Drain (Id) @ 25°C | 180mA (Ta) | |
Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4V | |
Rds On (Max) @ Id, Vgs | 3Ohm @ 50mA, 4V | |
Vgs(th) (Max) @ Id | 1V @ 1mA | |
Gate Charge (Qg) (Max) @ Vgs | - | |
Vgs (Max) | ±10V | |
Input Capacitance (Ciss) (Max) @ Vds | 9.5 pF @ 3 V | |
FET Feature | - | |
Power Dissipation (Max) | 150mW (Ta) | |
Operating Temperature | 150°C | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | VESM | |
Package / Case | SOT-723 |
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