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SSM3K15CT,L3F

Toshiba Semiconductor and Storage
SSM3K15CT,L3F
MOSFET N-CH 30V 100MA CST3
SC-101, SOT-883
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SSM3K15CT,L3F
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SSM3K15CT,L3F Attributes
TYPE DESCRIPTION SELECT
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V
Rds On (Max) @ Id, Vgs 4Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7.8 pF @ 3 V
FET Feature -
Power Dissipation (Max) 100mW (Ta)
Operating Temperature 150°C
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package CST3
Package / Case SC-101, SOT-883
2,448 In Stock
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