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SSM3J304T(TE85L,F)

Toshiba Semiconductor and Storage
SSM3J304T(TE85L,F)
MOSFET P-CH 20V 2.3A TSM
TO-236-3, SC-59, SOT-23-3
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SSM3J304T(TE85L,F) Attributes
TYPE DESCRIPTION SELECT
Series U-MOSIII
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4V
Rds On (Max) @ Id, Vgs 127mOhm @ 1A, 4V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 6.1 nC @ 4 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 335 pF @ 10 V
FET Feature -
Power Dissipation (Max) 700mW (Ta)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package TSM
Package / Case TO-236-3, SC-59, SOT-23-3
4,567 In Stock
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