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SSM3J14TTE85LF
Toshiba Semiconductor and Storage
SSM3J14TTE85LF
MOSFET P-CH 30V 2.7A TSM
TO-236-3, SC-59, SOT-23-3
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SSM3J14TTE85LF Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | U-MOSII | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V | |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 1.35A, 10V | |
| Vgs(th) (Max) @ Id | - | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 413 pF @ 15 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 700mW (Ta) | |
| Operating Temperature | 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TSM | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
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