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RN4987FE,LF(CT
Toshiba Semiconductor and Storage
RN4987FE,LF(CT
TRANS NPN/PNP PREBIAS 0.1W ES6
SOT-563, SOT-666
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RN4987FE,LF(CT Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) | |
| Current - Collector (Ic) (Max) | 100mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Resistor - Base (R1) | 10kOhms | |
| Resistor - Emitter Base (R2) | 47kOhms | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA | |
| Current - Collector Cutoff (Max) | 500nA | |
| Frequency - Transition | 250MHz, 200MHz | |
| Power - Max | 100mW | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-563, SOT-666 | |
| Supplier Device Package | ES6 |
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