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RN1961(TE85L,F)
Toshiba Semiconductor and Storage
RN1961(TE85L,F)
TRANS 2NPN PREBIAS 0.2W US6
6-TSSOP, SC-88, SOT-363
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RN1961(TE85L,F) Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
Transistor Type | 2 NPN - Pre-Biased (Dual) | |
Current - Collector (Ic) (Max) | 100mA | |
Voltage - Collector Emitter Breakdown (Max) | 50V | |
Resistor - Base (R1) | 4.7kOhms | |
Resistor - Emitter Base (R2) | 4.7kOhms | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V | |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA | |
Current - Collector Cutoff (Max) | 100nA (ICBO) | |
Frequency - Transition | 250MHz | |
Power - Max | 200mW | |
Mounting Type | Surface Mount | |
Package / Case | 6-TSSOP, SC-88, SOT-363 | |
Supplier Device Package | US6 |
342
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$0.32
Total Price:
$0.32
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