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CRG04(TE85L,Q,M)
Toshiba Semiconductor and Storage
CRG04(TE85L,Q,M)
DIODE GEN PURP 600V 1A S-FLAT
SOD-123F
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CRG04(TE85L,Q,M) Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
Technology | Standard | |
Voltage - DC Reverse (Vr) (Max) | 600 V | |
Current - Average Rectified (Io) | 1A | |
Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 1 A | |
Speed | Standard Recovery >500ns, > 200mA (Io) | |
Reverse Recovery Time (trr) | - | |
Current - Reverse Leakage @ Vr | 10 µA @ 600 V | |
Capacitance @ Vr, F | - | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Package / Case | SOD-123F | |
Supplier Device Package | S-FLAT (1.6x3.5) | |
Operating Temperature - Junction | -40°C ~ 150°C |
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