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CMG03(TE12L,Q,M)
Toshiba Semiconductor and Storage
CMG03(TE12L,Q,M)
DIODE GEN PURP 600V 2A M-FLAT
SOD-128
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CMG03(TE12L,Q,M) Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| Technology | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 600 V | |
| Current - Average Rectified (Io) | 2A | |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V @ 2 A | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | - | |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V | |
| Capacitance @ Vr, F | - | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Package / Case | SOD-128 | |
| Supplier Device Package | M-FLAT (2.4x3.8) | |
| Operating Temperature - Junction | -40°C ~ 150°C |
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