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CLH01(TE16L,Q)
Toshiba Semiconductor and Storage
CLH01(TE16L,Q)
DIODE GEN PURP 200V 3A L-FLAT
L-FLAT™
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CLH01(TE16L,Q) Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
Technology | Standard | |
Voltage - DC Reverse (Vr) (Max) | 200 V | |
Current - Average Rectified (Io) | 3A | |
Voltage - Forward (Vf) (Max) @ If | 980 mV @ 3 A | |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
Reverse Recovery Time (trr) | 35 ns | |
Current - Reverse Leakage @ Vr | 10 µA @ 200 V | |
Capacitance @ Vr, F | - | |
Grade | - | |
Qualification | - | |
Mounting Type | Surface Mount | |
Package / Case | L-FLAT™ | |
Supplier Device Package | L-FLAT™ (4x5.5) | |
Operating Temperature - Junction | -40°C ~ 150°C |
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