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2SJ438,Q(M
Toshiba Semiconductor and Storage
2SJ438,Q(M
MOSFET P-CH TO220NIS
TO-220-3 Full Pack
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2SJ438,Q(M Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
FET Type | - | |
Technology | - | |
Drain to Source Voltage (Vdss) | - | |
Current - Continuous Drain (Id) @ 25°C | 5A (Tj) | |
Drive Voltage (Max Rds On, Min Rds On) | - | |
Rds On (Max) @ Id, Vgs | - | |
Vgs(th) (Max) @ Id | - | |
Gate Charge (Qg) (Max) @ Vgs | - | |
Vgs (Max) | - | |
Input Capacitance (Ciss) (Max) @ Vds | - | |
FET Feature | - | |
Power Dissipation (Max) | - | |
Operating Temperature | - | |
Grade | - | |
Qualification | - | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-220NIS | |
Package / Case | TO-220-3 Full Pack |
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