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1SS193S,LF(D
Toshiba Semiconductor and Storage
1SS193S,LF(D
DIODE GEN PURP 80V 100MA S-MINI
TO-236-3, SC-59, SOT-23-3
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1SS193S,LF(D Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| Technology | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 80 V | |
| Current - Average Rectified (Io) | 100mA | |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 100 mA | |
| Speed | Small Signal =< 200mA (Io), Any Speed | |
| Reverse Recovery Time (trr) | 4 ns | |
| Current - Reverse Leakage @ Vr | 500 nA @ 80 V | |
| Capacitance @ Vr, F | 3pF @ 0V, 1MHz | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Supplier Device Package | S-Mini | |
| Operating Temperature - Junction | 125°C (Max) |
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