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CSD25401Q3

Texas Instruments
CSD25401Q3
MOSFET P-CH 20V 14A/60A 8VSON
8-PowerTDFN
Active
CSD25401Q3
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CSD25401Q3 Attributes
TYPE DESCRIPTION SELECT
Series NexFET™
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 14A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 11.7mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12.3 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 10 V
FET Feature -
Power Dissipation (Max) 2.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-VSON-CLIP (3.3x3.3)
Package / Case 8-PowerTDFN
1,331 In Stock
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