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STW55NM60ND

STMicroelectronics
STW55NM60ND
MOSFET N-CH 600V 51A TO247-3
TO-247-3
Active
STW55NM60ND
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STW55NM60ND Attributes
TYPE DESCRIPTION SELECT
Series FDmesh™ II
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 25.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 190 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 5800 pF @ 50 V
FET Feature -
Power Dissipation (Max) 350W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
5,654 In Stock
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