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STW55NM60ND
STMicroelectronics
STW55NM60ND
MOSFET N-CH 600V 51A TO247-3
TO-247-3
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STW55NM60ND Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | FDmesh™ II | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 600 V | |
Current - Continuous Drain (Id) @ 25°C | 51A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 60mOhm @ 25.5A, 10V | |
Vgs(th) (Max) @ Id | 5V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V | |
Vgs (Max) | ±25V | |
Input Capacitance (Ciss) (Max) @ Vds | 5800 pF @ 50 V | |
FET Feature | - | |
Power Dissipation (Max) | 350W (Tc) | |
Operating Temperature | 150°C (TJ) | |
Grade | - | |
Qualification | - | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-247-3 | |
Package / Case | TO-247-3 |
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