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STW20NM50

STMicroelectronics
STW20NM50
MOSFET N-CH 550V 20A TO247-3
TO-247-3
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STW20NM50
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STW20NM50 Attributes
TYPE DESCRIPTION SELECT
Series MDmesh™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 550 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 250mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1480 pF @ 25 V
FET Feature -
Power Dissipation (Max) 214W (Tc)
Operating Temperature 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
2,341 In Stock
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