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STS4DNFS30L

STMicroelectronics
STS4DNFS30L
MOSFET N-CH 30V 4A 8SO
8-SOIC (0.154", 3.90mm Width)
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STS4DNFS30L
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STS4DNFS30L Attributes
TYPE DESCRIPTION SELECT
Series STripFET™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 55mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 5 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 330 pF @ 25 V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
5,568 In Stock
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