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STP6NM60N

STMicroelectronics
STP6NM60N
MOSFET N-CH 600V 4.6A TO220AB
TO-220-3
Active
STP6NM60N
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STP6NM60N Attributes
TYPE DESCRIPTION SELECT
Series MDmesh™ II
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 920mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 420 pF @ 50 V
FET Feature -
Power Dissipation (Max) 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
6,525 In Stock
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