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STN1N20
STMicroelectronics
STN1N20
MOSFET N-CH 200V 1A SOT223
TO-261-4, TO-261AA
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STN1N20 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | MESH OVERLAY™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 200 V | |
| Current - Continuous Drain (Id) @ 25°C | 1A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 500mA, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 15.7 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 206 pF @ 25 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 2.9W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | SOT-223 | |
| Package / Case | TO-261-4, TO-261AA |
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