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STB12NM60N-1
STMicroelectronics
STB12NM60N-1
MOSFET N-CH 600V 10A I2PAK
TO-262-3 Long Leads, I²Pak, TO-262AA
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STB12NM60N-1 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | MDmesh™ II | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 600 V | |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 410mOhm @ 5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 30.5 nC @ 10 V | |
| Vgs (Max) | ±25V | |
| Input Capacitance (Ciss) (Max) @ Vds | 960 pF @ 50 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 90W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Mounting Type | Through Hole | |
| Supplier Device Package | I2PAK | |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
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