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BYT12P-1000
STMicroelectronics
BYT12P-1000
DIODE GEN PURP 1KV 12A TO220AC
TO-220-2
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BYT12P-1000 Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | - | |
Technology | Standard | |
Voltage - DC Reverse (Vr) (Max) | 1000 V | |
Current - Average Rectified (Io) | 12A | |
Voltage - Forward (Vf) (Max) @ If | 1.9 V @ 12 A | |
Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
Reverse Recovery Time (trr) | 155 ns | |
Current - Reverse Leakage @ Vr | 50 µA @ 1000 V | |
Capacitance @ Vr, F | - | |
Grade | - | |
Qualification | - | |
Mounting Type | Through Hole | |
Package / Case | TO-220-2 | |
Supplier Device Package | TO-220AC | |
Operating Temperature - Junction | -40°C ~ 150°C |
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