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GP2D010A120B
SemiQ
GP2D010A120B
DIODE SIL CARB 1.2KV 10A TO247-2
TO-247-2
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GP2D010A120B Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | Amp+™ | |
Technology | SiC (Silicon Carbide) Schottky | |
Voltage - DC Reverse (Vr) (Max) | 1200 V | |
Current - Average Rectified (Io) | 10A | |
Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A | |
Speed | No Recovery Time > 500mA (Io) | |
Reverse Recovery Time (trr) | 0 ns | |
Current - Reverse Leakage @ Vr | 20 µA @ 1200 V | |
Capacitance @ Vr, F | 635pF @ 1V, 1MHz | |
Grade | - | |
Qualification | - | |
Mounting Type | Through Hole | |
Package / Case | TO-247-2 | |
Supplier Device Package | TO-247-2 | |
Operating Temperature - Junction | -55°C ~ 175°C |
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