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GP2D010A065A
SemiQ
GP2D010A065A
DIODE SIL CARB 650V 10A TO220-2
TO-220-2
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GP2D010A065A Attributes
TYPE | DESCRIPTION | SELECT |
---|---|---|
Series | Amp+™ | |
Technology | SiC (Silicon Carbide) Schottky | |
Voltage - DC Reverse (Vr) (Max) | 650 V | |
Current - Average Rectified (Io) | 10A | |
Voltage - Forward (Vf) (Max) @ If | 1.65 V @ 10 A | |
Speed | No Recovery Time > 500mA (Io) | |
Reverse Recovery Time (trr) | - | |
Current - Reverse Leakage @ Vr | 100 µA @ 650 V | |
Capacitance @ Vr, F | 527pF @ 1V, 1MHz | |
Grade | - | |
Qualification | - | |
Mounting Type | Through Hole | |
Package / Case | TO-220-2 | |
Supplier Device Package | TO-220-2 | |
Operating Temperature - Junction | -55°C ~ 175°C |
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