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IMB7AT108
Rohm Semiconductor
IMB7AT108
TRANS 2PNP PREBIAS 0.3W SOT457
SOT-457
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IMB7AT108 Attributes
| TYPE | DESCRIPTION | SELECT |
|---|---|---|
| Series | - | |
| Transistor Type | 2 PNP - Pre-Biased (Dual) | |
| Current - Collector (Ic) (Max) | 100mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Resistor - Base (R1) | 4.7kOhms | |
| Resistor - Emitter Base (R2) | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA | |
| Current - Collector Cutoff (Max) | - | |
| Frequency - Transition | - | |
| Power - Max | 300mW | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-457 | |
| Supplier Device Package | SOT-457 |
3,194
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Unit Price:
$0.10
Total Price:
$0.10
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